Press release
GaN Based Power Device Market Insights, Forecast to 2025: By Product, Application, Manufacturer, Sales and Segmentation
The main objective of this report is to define, describe, and forecast the global “GaN Based Power Device ” market on the basis of types of applications, major sectors, deployment models, organization size, and regions. The report contains an analysis of the major factors influencing the growth of the market (drivers, restraints, opportunities, and challenges). It aims to strategically analyze the micromarkets with respect to individual growth trends, prospects, and their contribution to the market. The report attempts to forecast the market size for 5 major regions, namely, North America, Europe, Asia Pacific (APAC), Middle East and Africa (MEA), and Latin America. It contains key vendor profiles and comprehensively analyzes their core competencies. The report also tracks and analyzes competitive developments, including partnerships, collaborations, acquisitions, new product developments, and R&D activities in the market.
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The GaN Based Power Device market was valued at Million US$ in 2017 and is projected to reach Million US$ by 2025, at a CAGR of during the forecast period. In this study, 2017 has been considered as the base year and 2018 to 2025 as the forecast period to estimate the market size for GaN Based Power Device.
This report presents the worldwide GaN Based Power Device market size (value, production and consumption), splits the breakdown (data status 2013-2018 and forecast to 2025), by manufacturers, region, type and application.
This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.
The following manufacturers are covered in this report:
Cree (US)
Qorvo (US)
MACOM (US)
Microsemi Corporation (US)
Analog Devices US)
Efficient Power Conversion (US)
Integra Technologies (US)
Transphorm (US)
Navitas Semiconductor (US)
Texas Instruments (US)
Sumitomo Electric (Japan)
Northrop Grumman Corporation (US)
Qromis (US)
Polyfet (US)
TOSHIBA (Japan)
Sumitomo Electric (Japan)
Mitsubishi Electric (Japan)
GaN Systems (Canada)
VisIC Technologies (Israel)
GaNPower (Canada)
Infineon (Germany)
Exagan (France)
Ampleon (Netherlands)
EpiGaN (Belgium)
GaN Based Power Device Breakdown Data by Type
By Device Type
Power
RF Power
By Voltage Range
600 Volt
GaN Based Power Device Breakdown Data by Application
Telecommunications
Automotive
Renewables
Consumer and Enterprise
Aerospace & Defense
Medical
GaN Based Power Device Production by Region
United States
Europe
China
Japan
South Korea
Other Regions
GaN Based Power Device Consumption by Region
North America
United States
Canada
Mexico
Asia-Pacific
China
India
Japan
South Korea
Australia
Indonesia
Malaysia
Philippines
Thailand
Vietnam
Europe
Germany
France
UK
Italy
Russia
Rest of Europe
Central & South America
Brazil
Rest of South America
Middle East & Africa
GCC Countries
Turkey
Egypt
South Africa
Rest of Middle East & Africa
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The study objectives are:
To analyze and research the global GaN Based Power Device status and future forecastinvolving, production, revenue, consumption, historical and forecast.
To present the key GaN Based Power Device manufacturers, production, revenue, market share, and recent development.
To split the breakdown data by regions, type, manufacturers and applications.
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions.
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
In this study, the years considered to estimate the market size of GaN Based Power Device :
History Year: 2013 - 2017
Base Year: 2017
Estimated Year: 2018
Forecast Year: 2018 - 2025
This report includes the estimation of market size for value (million USD) and volume (K Units). Both top-down and bottom-up approaches have been used to estimate and validate the market size of GaN Based Power Device market, to estimate the size of various other dependent submarkets in the overall market. Key players in the market have been identified through secondary research, and their market shares have been determined through primary and secondary research. All percentage shares, splits, and breakdowns have been determined using secondary sources and verified primary sources.
For the data information by region, company, type and application, 2017 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.
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