RF GaN Market Growth Rate Analysis By NXP Semiconductors NV, Analog Devices, RFHIC Corporation, Mitsubishi Electric Corporation

RF GaN Market Research Report, Material (GaN-on-SiC, GaN-on-Silicon), Application (Wireless infrastructure, Aerospace, and Defense) — Global Forecast till 2023

Worldwide, the RF GaN market is expected to grow from USD 337.28 million in 2017 to USD 992.38 million by 2023, at a compound annual growth rate (CAGR) of 19.71% during the forecast period.

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Market Highlights:

RF Gallium Nitride (GaN) is expected to have a promising growth in the market the next few years. It bridges the gap between two older technologies, exhibiting the high-frequency performance of gallium arsenide combined with the power handling capabilities of laterally diffused metal oxide semiconductors(LDMOS). It is a mainstream technology which has now achieved measurable market share and is expected to capture a significant part of the market in future. The strongest sector in the RF power semiconductor adoption business, outside of defense, is commercial avionics and air traffic control. GaN power amplifiers are now finding their use in cellular base stations. GaN material with higher power, better linearity, more frequency bands and improved efficiency are driving current developments in the RF semiconductor devices market. Defense remains an important market for GaN, and more and more new products and designs are benefiting from GaN’s superior performance and design simplification. There is a steady growing penetration rate for GaN in defense market applications like IED jammers, military communications, radar, electronic warfare, and more

Segmentation:

By material, the market is segmented into GaN-on-SiC and GaN-on-Silicon.
By application, the market is segmented into wireless infrastructure, aerospace and defense and others.
By region, the market is segmented into North America, Europe, Asia-Pacific, and the rest of the world.

Key players:

The prominent players in the RF GaN market are NXP Semiconductors NV (Netherlands), Analog Devices Inc. (US), RFHIC Corporation (South Korea) and Mitsubishi Electric Corporation (Japan).

Other players in the RF GaN market are Aethercomm Inc. (US), Microsemi Corporation (US), Cree Inc. (US), STMicroelectronics NV(Switzerland), Toshiba Corporation (Japan), M/A-COM Technology Solutions Holdings Inc. (US), and Qorvo Inc (US).

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Regional Analysis:

The global market for RF GaN is estimated to grow at a significant rate during the forecast period from 2018 to 2023. The geographical analysis of RF GaN market is studied for North America, Europe, Asia-Pacific, and the rest of the world.

North America dominates the RF GaN market and holds a significant market share due to its increasing investments in defense and aerospace industry. The US government is also promoting the adoption of energy-efficient devices and are undertaking substantial measures towards this direction.

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Asia-Pacific is expected to emerge as the fastest growing region over the forecast period, due to rapid technological advancements that are fueling the demand for efficient and high-performance RF components. Increasing demand for better cellular networks from countries such as China, India, South Korea, Taiwan, and Malaysia are expected to drive RF GaN market in this region.

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