SiC & GaN Power Devices Market Cost Analysis, Strategy and Growth Factor 2025

The SiC & GaN Power Devices market report recognizes that in this rapidly-evolving and competitive environment, up-to-date marketing information is essential to monitor performance and make critical decisions for growth and profitability.

Download PDF Brochure of SiC & GaN Power Devices Market spread across 111 Pages, Profiling 12 Companies and Supported with tables and figures are now available at https://www.reportsnreports.com/contacts/requestsample.aspx?name=1716229 .

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016. SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.

There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.

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Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries. The SiC & GaN Power Devices market was valued at 320 Million US$ in 2017 and is projected to reach 3080 Million US$ by 2025, at a CAGR of 32.5% during the forecast period. In this study, 2017 has been considered as the base year and 2018 to 2025 as the forecast period to estimate the market size for SiC & GaN Power Devices.

The following manufacturers are covered in this report:
- Infineon
- Rohm
- Mitsubishi
- STMicro
- Fuji
- Toshiba
- Microsemi
- United Silicon Carbide Inc.
- GeneSic
- Efficient Power Conversion (EPC)
- GaN Systems
- VisIC Technologies LTD

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This report presents the worldwide SiC & GaN Power Devices market size (value, production and consumption), splits the breakdown (data status 2013-2018 and forecast to 2025), by manufacturers, region, type and application.

This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.

SiC & GaN Power Devices Breakdown Data by Type
- GaN
- SiC
SiC & GaN Power Devices Breakdown Data by Application
- Consumer Electronics
- Automotive & Transportation
- Industrial Use
- Others

The study objectives SiC & GaN Power Devices are:
- To analyze and research the global SiC & GaN Power Devices status and future forecast,involving, production, revenue, consumption, historical and forecast.
- To present the key SiC & GaN Power Devices manufacturers, production, revenue, market share, and recent development.
- To split the breakdown data by regions, type, manufacturers and applications.
- To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
- To identify significant trends, drivers, influence factors in global and regions.
- To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

In this study, the years considered to estimate the market size of SiC & GaN Power Devices :
- History Year: 2013 - 2017
- Base Year: 2017
- Estimated Year: 2018
- Forecast Year: 2018 - 2025

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