RF Power Semiconductor Market to 2025 - Top Key Players Broadcom, Infineon Technologies AG, M/A-Com Technology Solutions Holdings, Mitsubishi Electric Corporation, Murata Manufacturing

RF Power Semiconductors act as key component in any wireless communication device. These devices enable the effective working of RF Power Amplifiers, RF Passives, RF Duplexers, and RF Switches. The most common application of RF Power semiconductor is cellphone. Cellphone requires small RF Power semiconductor devices that deliver several watts of RF power. These semiconductor devices must meet the stringent performance specifications, output power, and linearity for the wireless systems to comply with ITU (International Telecommunication Unit). Depending on the modulation format namely GSM, CDMA or WCDMA, these semiconductor devices have varied specifications to use in handheld and fixed products.

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Increasing penetration of wireless devices across different industry verticals is primarily driving the growth of global RF Power Semiconductor market. Further, the avionics industry is the one of the major end-user of RF power semiconductor devices. This covers both airborne ATC & ground based ATC systems, commercial and military radar based systems.

Leading RF Power Semiconductor Market Players:

Broadcom Limited
Infineon Technologies AG
M/A-Com Technology Solutions Holdings, Inc.
Mitsubishi Electric Corporation
Murata Manufacturing Co., Ltd.
NXP Semiconductors N.V.
Qualcomm Inc.
Qorvo, Inc.
Skyworks Solutions, Inc.
Toshiba Corporation

The objectives of this report are as follows:

- To provide overview of the global RF Power Semiconductor market
- To analyze and forecast the global RF Power Semiconductor market on the basis of application, material and end-use.
- To provide market size and forecast till 2025 for overall RF Power Semiconductor market with respect to five major regions, namely; North America, Europe, Asia Pacific (APAC), Middle East and Africa (MEA), and South America (SAM), which are later sub-segmented across respective major countries.
- To evaluate market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend.
- To provide exhaustive PEST analysis for all five regions.
- To profiles key RF Power Semiconductor players influencing the market along with their SWOT analysis and market strategies.

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Some of the important players in RF Power Semiconductor market are Broadcom Limited, Infineon Technologies AG, M/A-Com Technology Solutions Holdings, Inc., Mitsubishi Electric Corporation, Murata Manufacturing Co., Ltd., NXP Semiconductors N.V., Qualcomm Inc., Qorvo, Inc., Skyworks Solutions, Inc., and Toshiba Corporation.

Reason to Buy

- Save and reduce time carrying out entry-level research by identifying the growth, size, leading players and segments in the global RF Power Semiconductor Market
- Highlights key business priorities in order to assist companies to realign their business strategies.
- The key findings and recommendations highlight crucial progressive industry trends in the RF Power Semiconductor Market, thereby allowing players to develop effective long term strategies.
- Develop/modify business expansion plans by using substantial growth offering developed and emerging markets.
- Scrutinize in-depth global market trends and outlook coupled with the factors driving the market, as well as those hindering it.
- Enhance the decision-making process by understanding the strategies that underpin commercial interest with respect to products, segmentation and industry verticals.

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