GaN RF Devices Market Overview: Trends, Size, CAGR, Share and Opportunity Forecast through 2017 – 2026 Including Key Players Profiling (Raytheon, Sumitomo Electric, Bosch, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Panasonic, Renesas, an

Dublin, Ireland, 2018-Aug-03 — The global GaN RF devices market will continue to be driven by GaN’s wide bandgap property that encourages innovation, growing demand for GaN RF devices in aerospace, defense & military verticals, and successful implementation of GaN technology in RF-power electronics. This report, compiled by Fact.MR, provides in-depth analysis of the global Gan RF Devices Market for the forecast period 2017-2026, offering key insights on the growth prospects of the market.

The next section offers an overview of the global GaN RF devices market. This section includes definition of the product – GaN RF devices, along with insights on dynamics contributing towards growth of the market. The overview also throws light on year-on-year growth and market value defining the future progress and decline of the global GaN RF devices. Statistics on the year-on-year growth provides readers with a broader view on expected progress patterns reshaping growth over the forecast period.

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Proliferation of next generation LTE wireless networks is considered to be a key factor propelling demand for GaN RF devices. Continuous rise in data consumption has fuelled expansion of commercial networks, prompting network carriers in adopting next generation LTE networks including 4G and 5G. High frequency data bandwidth connections of GaN RF technology has made it an ideal selection for network service providers. Deployment of GaN RF devices is likely to enable LTE devices in providing higher speeds to allow consumers download & upload content such as photographs and music, as well as watch online TV shows and play online games on maximum frequency bands. In addition, GaN RF devices ensure the device’s ability to generate maximum frequency at necessary frequency band, preventing interferences from other frequency bands.

Proliferation of IoT is expected to emerge as one of the popular trends in the GaN RF devices market. Successful implementation of IoT needs data transfer over the network, deprived of human-to-computer interaction. Micro-electrical-mechanical systems and sensors have become an integral part of the IoT devices, and are expected to have a positive influence on demand for semiconductors. Increasing implementation of IoT has resulted into signal congestion, thereby creating the requirement for GaN technology, which can amplify the bandwidth, capacity and power required for communication between interconnected devices.

According to FactMR’s new report, the global market for GaN RF devices is poised to register a splendid rise through the forecast period (2017-2026). Over US$ 1,600 Mn worth of GaN RF devices are estimated to be sold around the world by 2026-end.

The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.

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Owing to large-scale 4G network deployment, the need for base stations and high-power transistors is increasing, thereby creating robust demand for wireless infrastructure. In addition, growing adoption of tablets, computers and smartphones, emergence of 5G network, and proliferation of IoT will further create growth avenues for wireless infrastructure. Wireless infrastructure will remain the largest application of GaN RF devices, followed by PV inverter.

Key Research Findings from Fact.MR’s Report

Telecommunications sector will remain the most lucrative end-user of GaN RF devices
Discrete GaN RF devices are anticipated to remain preferred among products in the market
Competition Tracking

Most of the vendors in the GaN RF devices market have similar offerings, competing primarily in terms of key factors including support services, performance & quality, price and innovation. Requirement of enormous capital investment for development, innovation, and research for making advancements in GaN RF Devices remains a major concern for new market entrants. This will further intensify the competition between existing players. Key market participants mapped by FactMR’s report include Raytheon, Sumitomo Electric, Bosch, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Panasonic, Renesas, and Infineon.

Table of Contents

Global Outlook
Global GaN RF Devices Market - Executive Summary
Global GaN RF Devices Market Overview
3.1. Introduction

       3.1.1. Global GaN RF Devices Market Taxonomy

       3.1.2. Global GaN RF Devices Market Definition

3.2. Global GaN RF Devices Market Size (US$ Mn) and Forecast, 2012-2026

       3.2.1. Global GaN RF Devices Market Y-o-Y Growth

3.3. Global GaN RF Devices Market Dynamics

3.4. SiC and GaN-on-Si Device Market Comparison

3.5. Semiconductor Industry Segmentation

3.6. Power Discretes and Modules Competitive Comparison

3.7. WBG Material Cost and Wafer Size Comparison

3.8. Application for GaN Devices in RF Electronic System

3.9. Key Participants Market Presence (Intensity Map) By Region

Global GaN RF Devices Market Analysis and Forecast 2012-2026
4.1. Global GaN RF Devices Market Size and Forecast By Product Type, 2012-2026

       4.1.1. Module Market Size and Forecast, 2012-2026

              4.1.1.1. Revenue (US$ Mn) Comparison, By Region

              4.1.1.2. Market Share Comparison, By Region

              4.1.1.3. Y-o-Y growth Comparison, By Region

Continued…………………..

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