RF Power Amplifier Market 2018 Global Leaders Analysis: Mitsubishi Electric, Qualcomm, Broadcom Limited, ANADIGICS, Murata Manufacturing, Infineon Technologies AG, Toshiba

Market Research Future published a research report on “RF Power Amplifier Market Research Report-Global Forecast 2023” – Market Analysis, Scope, Stake, Progress, Trends and Forecast to 2023.

RF Power Amplifier Global Market - Overview

The number of mobile users around the world are increasing and the consumption of smartphones is rising, the network service providers are moving from 2G to 3G and now to LTE which introduces the users to various features. RF Power amplifiers are required for communications in smartphones, many companies in semiconductor industry are adopting complementary metal-oxide-semiconductor (CMOS) technology. Trend towards LTE and 5G is driving the RF Power Amplifier Market growth across the globe. On the same platform, many developing countries are adopting LTE technology in their network infrastructure for better internet access and better communication through VoLTE. Thus, the increasing demand of RF power amplifiers from cellular networks for achieving efficient performance is fostering the growth of RF power amplifier market. Also, Internet of Things plays a vital role in various fields apart from communication networks, transport and energy use. Internet of things refers to a technology that connects all devices to a network. Internet ready and connective devices are achieved by IoT technology. This enables the flow of data creating a network of objects. Internet of Things leads to advanced use of internet which would result in developing device to device relationship. It has been studied that the IoT market is growing exponentially leading to the high demand for RF power amplifiers.

The RF Power Amplifier Market is expected to grow at approx. USD 11 Billion by 2023, at 16% of CAGR between 2017 and 2023.

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Key Players:

The prominent players in RF power amplifier market are – Qualcomm (U.S.), Analog Devices (U.S.), Skyworks Solutions, Inc. (U.S.), Broadcom Limited (Singapore), ANADIGICS, Inc. (U.S.), Murata Manufacturing Co., Ltd. (Japan), Infineon Technologies AG (Germany), NXP Semiconductors N.V. (Netherlands), Toshiba Corporation (Japan) and Mitsubishi Electric Corporation (Japan) among others.

Industry News

December, 2017, Toshiba America Electronic Components, Inc., a committed technology leader, today announced a new IC that is compliant with the Bluetooth Low Energy (LE) core specification 4.2 – including support for a secure connection, LE privacy features and extended packet length. The new TC35679IFTG is designed for use in harsh automotive environments and extended temperature ranges. A mixed-signal device, the TC35679IFTG contains both analog RF and baseband digital parts. This enables it to provide a complete solution in a single, compact, low-profile (40-pin 6mm x 6mm x 1mm) QFN ‘wettable flank’ package with a pin pitch of 0.5mm. The TC35679 provides Bluetooth Host Control Interface (HCI) functions alongside low energy GATT profile functions. The new IC becomes a fully-fledged application processor when used in conjunction with external non-volatile memory. It can also be used in combination with an external host processor.

December, 2017, - Vangochip Technology, a world-class fabless semiconductor company delivering smart grid and IIoT communication solution, today announced its first-gen sub-GHz RF family VC7000 passed the Wi-SUN Alliance PHY Certification. The certification signifies Vangochip’s VC7000 family is formally tested and validated to have seamless interoperability and conformity to the industry-agreed IEEE 802.15.4g standards. VC7000 low power sub-GHz RF transceiver features a very wide range of RF bands from 169 to 960MHz. State-of-the-art sensitivity and selectivity with block-resilient IIP3 of -10dBm make it an ideal solution for robust smart utility networks. Adjacent channel rejection can achieve better than 40dB even at data rate > 50kbps. With a dual power amplifier of +20/+13dBm and T/R switch integrated, RBOM is greatly reduced.

June, 2017, - Analog Devices, Inc. today introduced a wideband gallium nitride (GaN) power amplifier that offers best-in-class performance within a compact design. Covering the 300 MHz to 6 GHz spectrum, the highly integrated HMC8205 provides significant benefits for system designers of applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification test equipment that require pulse or continuous wave (CW) support. The HMC8205 GaN MMIC amplifier offers unmatched integration, gain, efficiency, and wide bandwidth in a small footprint that requires minimal external circuitry, thereby reducing overall component count and board space.

Segments:

RF power amplifier market can be segmented on the basis of following:

By Product

• < 10 GHz
• 10-20 GHz
• 20-30 GHz
• 30-60 GHz
• 60+ GHz

By Application

• Consumer Electronics
• Aerospace & Defense
• Automotive
• Medical
• Others

Regional Analysis:

The regional analysis of RF power amplifier market is being studied for regions such as Asia Pacific, North America, Europe and Rest of the World. It has been observed that Asia Pacific is estimated to account for the largest share of the market and is projected to grow at the fastest rate during the forecast period. The major growth in RF power amplifier market in Asia Pacific is attributed to growing economy in the Asian countries like China, Japan and India and strong presence of manufacturing industries in that region.

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Intended Audience

• Technology Investors
• Research/Consultancy Firms
• Original equipment manufacturers (OEMs)
• OEM technology solution providers
• Amplifiers Manufacturers
• Amplifiers Suppliers
• Manufacturing Companies
• Consumers

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