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Next-Generation Memory Market Analysis By Top Vendors like Toshiba Corporation, Samsung, Intel Corporation, Micron Technology, Inc., SK HYNIX INC., Western Digital Corporation, Adesto Technologies Corporation, Inc., Microchip Technology Inc., Fujitsu
Press release from: Data Bridge Market Research
Global Next-Generation Memory Market Statistical Overview Report 2018 gives an outstanding tool for market Survey, openings, and Vital key and strategic basic leadership. This report perceives that in this quickly advancing and competitive scenario, up-coming data on the basis of Next-Generation Memory Market research execution and settle on basic choices for development and benefit. It gives data on Next-Generation Memory Market trends and advancements and sheds light on various sectors, limitations and advancements, and on the evolving structure of the market.
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The Global Next-Generation Memory Market accounted to USD 2.4 billion in 2017 growing at a CAGR of xx% during the forecast period of 2018 to 2025. The upcoming market report contains data for historic years 2016, the base year of calculation is 2017 and the forecast period is 2018 to 2025.
The global next-generation memory market is highly fragmented and is based on new product launches and clinical results of products. Hence the major players have used various strategies such as new product launches, clinical trials, market initiatives, high expense on research and development, agreements, joint ventures, partnerships, acquisitions, and others to increase their footprints in this market. The report includes market shares of Next-Generation Memory market for global, Europe, North America, Asia Pacific and South America.
Some of the major players operating in global next-generation memory market are :-
Micron Technology, Inc.,
SK HYNIX INC.,
Western Digital Corporation,
Adesto Technologies Corporation, Inc.,
Microchip Technology Inc.,
Everspin Technologies Inc.,
Advanced Micro Devices, Inc.,
4DS Memory Limited,
VIKING RANGE, LLC
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Major Market Drivers and Restraints:
Demand for Universal Memory Devices
Need for Low Power Consumption, High Bandwidth and Highly Accessible Memory Device
Growing Demand for Enterprise Storage Applications
Nonexistence of Stability in Adverse Environmental Situations
Potential for Substituting Flash Memory
By technology the global next-generation memory market is segmented into volatile memory, and nonvolatile memory.
Nonvolatile memory is further sub-segmented into magneto-resistive random-access memory (MRAM), ferroelectric RAM (FRAM), 3D Xpoint (Quantx & Optane), resistive random-access memory (RERAM)/ conductive-bridging RAM (CBRAM), nano RAM (NRAM), and others.
Volatile memory is further sub-segmented into Hybrid Memory Cube (HMC), and High-Bandwidth Memory (HBM).
By application the global next-generation memory market is segmented into mobile phones, cache memory, embedded MCU, and smart cards.
By industry the global next-generation memory market is segmented into enterprise storage, consumer electronics, military & aerospace, industrial, automotive & transportation, telecommunications, energy and power, healthcare, agriculture, and retail.
By wafer size the global next-generation memory market is segmented into nonvolatile memory market, and volatile memory market.
Volatile memory market is further sub-segmented into 200 mm, 300 mm, and 450 mm.
On the basis of geography, global next-generation memory market report covers data points for 28 countries across multiple geographies such as North America & South America, Europe, Asia-Pacific, and Middle East & Africa.
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