06-14-2018 04:43 PM CET - Business, Economy, Finances, Banking & Insurance
Print

Global GaN RF Devices Market Research Reveals Demand by Regions, End Users, Share and Forecast to 2026

Press release from: Fact.MR
Fact.MR
Fact.MR
The rapidly expanding GaN RF devices market is the focus of a new report added to the market intelligence repository of Fact.MR. This 170-page broad study is headlined as “GaN RF Devices Market Research Forecast, Trend Analysis & Competition Tracking: Global Review 2017 to 2026” which noticeably examines the prospects of the global GaN RF devices industry till the end of 2022, using the market’s development trajectory in the recent past as the key indicator of actionable insights into the market’s growth pattern. A blend of primary & secondary research has been implemented for offering estimates and forecasts on the concerned market.

Request Sample Report@ www.factmr.com/connectus/sample?flag=S&rep_id=383

GaN Technology is used for Development of Higher Performance RF Devices

With the recent upsurge of wireless communication industry, steady yet continuous progress of the conventional military applications, radiofrequency devices are playing a pivotal role in several aspects of human activities. This has further increased demand for high performance RF devices. In mobile communication applications, the next generation smartphones need improved efficiency and wide bandwidth. RF amplifiers with higher frequency and power are essential for TV broadcasting and developing satellite communications, in order to reduce antenna size of the terminal users. Similar requirement holds for the broadband wireless internet connections owing to ever growing pace or data transmission rate. The aforementioned requirements have necessitated the development of higher performance RF devices based on GaN, owing to its wider bandwidth.

Proliferation of IoT is expected to emerge as one of the popular trends in the GaN RF devices market. Successful implementation of IoT needs data transfer over the network, deprived of human-to-computer interaction. Micro-electrical-mechanical systems and sensors have become an integral part of the IoT devices, and are expected to have a positive influence on demand for semiconductors. Increasing implementation of IoT has resulted into signal congestion, thereby creating the requirement for GaN technology, which can amplify the bandwidth, capacity and power required for communication between interconnected devices.

APEJ to Remain Dominant Market for GaN RF Devices

The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.

Competition Tracking

Most of the vendors in the GaN RF devices market have similar offerings, competing primarily in terms of key factors including support services, performance & quality, price and innovation. Requirement of enormous capital investment for development, innovation, and research for making advancements in GaN RF Devices remains a major concern for new market entrants. This will further intensify the competition between existing players. Key market participants mapped by Fact.MR’s report include Raytheon, Sumitomo Electric, Bosch, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Panasonic, Renesas, and Infineon.

View Report@ www.factmr.com/report/383/gan-rf-devices-market

Table of Contents:

Global Outlook
Global GaN RF Devices Market – Executive Summary
Global GaN RF Devices Market Overview
3.1. Introduction
3.1.1. Global GaN RF Devices Market Taxonomy
3.1.2. Global GaN RF Devices Market Definition
3.2. Global GaN RF Devices Market Size (US$ Mn) and Forecast, 2012-2026
3.2.1. Global GaN RF Devices Market Y-o-Y Growth
3.3. Global GaN RF Devices Market Dynamics
3.4. SiC and GaN-on-Si Device Market Comparison
3.5. Semiconductor Industry Segmentation
3.6. Power Discretes and Modules Competitive Comparison
3.7. WBG Material Cost and Wafer Size Comparison
3.8. Application for GaN Devices in RF Electronic System
3.9. Key Participants Market Presence (Intensity Map) By Region
Global GaN RF Devices Market Analysis and Forecast 2012-2026
4.1. Global GaN RF Devices Market Size and Forecast By Product Type, 2012-2026
4.1.1. Module Market Size and Forecast, 2012-2026
4.1.1.1. Revenue (US$ Mn) Comparison, By Region
4.1.1.2. Market Share Comparison, By Region
4.1.1.3. Y-o-Y growth Comparison, By Region
Continued……..

Check Discount on this Report@ www.factmr.com/connectus/sample?flag=D&rep_id=383

About Fact.MR
Fact.MR is a fast-growing market research firm that offers the most comprehensive suite of syndicated and customized market research reports. We believe transformative intelligence can educate and inspire businesses to make smarter decisions. We know the limitations of the one-size-fits-all approach; that’s why we publish multi-industry global, regional, and country-specific research reports.

Contact Us
Fact.MR
11140 Rockville Pike
Suite 400
Rockville, MD 20852
United States
Email: sales@factmr.com
Web: www.factmr.com/
Follow Us on Linkedin: www.linkedin.com/company/factmr/

This release was published on openPR.
News-ID: 1083370 • Views: 233
More releases More releases
Permanent link to this press release:

Please set a link in the press area of your homepage to this press release on openPR.
openPR disclaims liability for any content contained in this release.

You can edit or delete your press release here: