GaN Semiconductor Devices Industry Analysis Global Market, Gr Size, Share,owth, Trends and Forecast 2016 - 2024

As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors. The wide band gap semiconductor technology has matured rapidly over several years. In fact, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) have been available as commercial off-the-shelf devices since 2005. Recently, the IMEC (Interuniversity Microelectronics Center) in Europe organized a “GaN-on-Si research program” in order to produce an 8 inch GaN-on-Si wafer. However, fully-fledged application of GaN semiconductor devices is still in the nascent stage as compared to silicon semiconductor devices that have been around for more than a decade.

Request For Sample Report: http://www.mrrse.com/sample/997

The GaN semiconductors devices market is primarily being driven by factors such as advancement in technology coupled with the expansion in the application areas for GaN based devices. There has been a rapid advancement in the GaN technology as a result of which various companies are coming up with new innovative products that are cost-effective and have better design and performance. Moreover, in order to address the growing demand for high power and high temperature applications there has been an increase in the usage of GaN semiconductor devices. Compared to Silicon (Si) and Gallium Arsenide (GaAs), gallium nitride is a robust technology and possesses better performance characteristics. GaN semiconductor devices offer high breakdown voltages, saturation velocity, high electron mobility and high thermal conductivity among others. This has enabled the implementation of GaN on a wide basis high frequency RF devices and LEDs. These factors in combination are expected to positively impact the growth of the GaN semiconductor devices globally.

However one of the major restraints of the GaN semiconductor devices market is the high production cost of pure Gallium nitride as compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. The various costs involved in the production of GaN devices include cost of substrate, fabrication, packaging, support electronics and development. Thus, high cost is one of the major challenges in the commercialization of GaN based devices. Though producing GaN in large volumes can help overcome these issues, currently, there is no widespread adopted method for growing GaN in bulk due to high operating pressures and temperatures, low material quality and limited scalability.

The competitive profiling of the key players in the global Gan semiconductor devices market and their market shares across four regions which include North America, Europe, Asia Pacific and Rest of the World (RoW) have been exhaustively covered under the purview of the study. Moreover, the distinct business strategies that have been adopted by the major players in the market have also been included in the report.

A comprehensive analysis of market dynamics, which include the market drivers, restraints and opportunities, is included under the scope of the report. Market dynamics are the distinctive factors that influence the growth of the specific market and therefore help to study the current trends in the global market. Additionally, list of top GaN based IC manufacturers have also been included under the scope of the research. Thus, this report provides an inclusive study of the global GaN semiconductor devices market and also provides the forecast of the market for the period from 2016-2024.

Browse Full Report with TOC : http://www.mrrse.com/gallium-nitride

Some of the major players in the market are: Mersen S.A., Avogy, Inc., Fujitsu Limited, GaN Systems Inc., Cree Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Toshiba Corporation, Everlight Electronics Co. and Efficient Power Conversion Corporation

The global GaN semiconductor devices market has been segmented into:

Global GaN semiconductor devices market, by Products

Power Semiconductors
GaN Radio Frequency Devices
Opto-semiconductors
Global GaN semiconductor devices market, by Wafer Size: The market is broadly segmented on the basis of wafer size into:

2 inch
4 inch
6 inch
8 inch
Global GaN semiconductor devices market, by Application: The market is broadly segmented on the basis of application into:

Information and Communication Technology
Automotive
Consumer Electronics
Defense and Aerospace
Others
Global GaN semiconductor devices market, by Geography: The market is broadly segmented on the basis of geography into:

North America
Europe
Asia Pacific
Rest of the World

Market Research Reports Search Engine (MRRSE) is an industry-leading database of market intelligence reports. MRRSE is driven by a stellar team of research experts and advisors trained to offer objective advice. Our sophisticated search algorithm returns results based on the report title, geographical region, publisher, or other keywords. 

MRRSE partners exclusively with leading global publishers to provide clients single-point access to top-of-the-line market research. MRRSE’s repository is updated every day to keep its clients ahead of the next new trend in market research, be it competitive intelligence, product or service trends or strategic consulting.

State Tower
90, State Street
Suite 700
Albany, NY - 12207
United States Telephone: +1-518-730-0559
Email: sales@mrrse.com
Website: http://www.mrrse.com/

This release was published on openPR.