Ferroelectric RAM Global Market Industry Analysis Research Report Trends and Forecast, 2016 - 2024

Market Research Reports Search Engine (MRRSE) announces the addition of a new report titled “Ferroelectric RAM Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 - 2024”. Ferroelectric random access memory (RAM), also called as FRAM, is a random access memory that combines the features of dynamic RAM (DRAM) with read-only memory (ROM) and flash memory.

Request For Sample Report@ http://www.mrrse.com/sample/1988

Global Ferroelectric RAM Market: Overview

FRAM offers fast read and write access along with the ability to retain data even after the power supply is turned off. As against DRAM, FRAM uses a ferroelectric layer for its fabrication instead of a dielectric layer. Although the construction of FRAM is similar to that of DRAM, unlike DRAM, FRAM is non-volatile in nature. Thus, FRAM provides functionality similar to conventional flash memories. FRAM offers various advantages over DRAM, static RAM (SRAM) and other non-volatile memories. Some of the advantages include lower power requirement, faster read and write operations and high number of write and erase cycles. The FRAM requires power only when writing or reading a cell and requires no power during its idle state. Moreover, unlike the flash memories, FRAM does not require refresh process and are capable of completing a write process in much less time cycle. Since FRAM are faster than flash memories, these are expected to replace other technologies such as electrically erasable and programmable read only memory (EEPROM) and SRAM in wireless applications.

Global Ferroelectric RAM Market: Drivers and Restraints

The major driving factor for the ferroelectric RAM market is its advantages over other conventional memory technologies. Moreover, due to increasing developments in the electronic handheld devices, FRAM is expected to witness healthy demand in near future. Rising demand for fast memory operations in security systems and smart card applications is another factor contributing to the demand for ferroelectric RAM. Furthermore, ferroelectric RAM is an emerging technology and is expected to have huge potential owing to its advantages over conventional memories. Thus, vendors in the ferroelectric RAM market are increasingly investing in research and development (R&D) of ferroelectric RAM. This is expected to boost the FRAM market growth significantly in near future. Also, due to its fast operations, FRAM is likely to be used widely in data storage applications and other applications such as wireless sensors deployment. However, low density of FRAM as compared to the conventional volatile as well as non-volatile memories is a significant aspect that may hamper the growth of the ferroelectric RAM market. The storage capacity of ferroelectric RAM is much lower as against that of conventional memory. Thus, these memories are majorly used where speed of operation is more important than the data storage requirement.

Make an Enquiry@ http://www.mrrse.com/enquiry/1988

Global Ferroelectric RAM Market: Segmentation and Regional Dynamics
Ferroelectric RAM market can be segmented based on the applications, device types and geographic regions. FRAMs are used in security systems, energy meters, smart card applications, access control applications, sensor networks and others. FRAM is widely used in wireless applications and wireless sensors applications due to their high power efficiency. FRAM are used in various devices such as computer desktops, laptops, mobile devices, meters, personal digital assistant (PDA) and other handheld devices. On the basis of geography, the ferroelectric RAM market is segmented as North America, Europe, Asia Pacific and Rest of the World (RoW).

Some of the key players in the ferroelectric RAM market are Cypress Semiconductor Corporations, Texas Instruments Inc., International Business Machines (IBM) Corporation, Toshiba Corporation, Infineon Technologies Inc., LAPIS Semiconductor Co. Ltd. and Fujitsu Ltd. Fujitsu Ltd. was the first semiconductor manufacturer to build embedded ferroelectric RAM.
The report offers a comprehensive evaluation of the market. It does so via in-depth qualitative insights, historical data, and verifiable projections about market size. The projections featured in the report have been derived using proven research methodologies and assumptions. By doing so, the research report serves as a repository of analysis and information for every facet of the market, including but not limited to: Regional markets, technology, types, and applications.

The study is a source of reliable data on:

• Market segments and sub-segments
• Market trends and dynamics
• Supply and demand
• Market size
• Current trends/opportunities/challenges
• Competitive landscape
• Technological breakthroughs
• Value chain and stakeholder analysis

About Us

Market Research Reports Search Engine (MRRSE) is an industry-leading database of market intelligence reports. MRRSE is driven by a stellar team of research experts and advisors trained to offer objective advice. Our sophisticated search algorithm returns results based on the report title, geographical region, publisher, or other keywords.

MRRSE partners exclusively with leading global publishers to provide clients single-point access to top-of-the-line market research. MRRSE’s repository is updated every day to keep its clients ahead of the next new trend in market research, be it competitive intelligence, product or service trends or strategic consulting.

Contact

State Tower
90, State Street
Suite 700
Albany, NY - 12207
United States
Telephone: +1-518-730-0559
Email: sales@mrrse.com
Google+: https://plus.google.com/u/0/109558601025749677847/posts
Linked in: https://www.linkedin.com/company/mrrse
Twitter: https://twitter.com/MRRSEmrrse

This release was published on openPR.